Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC
- DOI
- 10.48550/arxiv.2505.02671
- Published
- 2025
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2505.02671,
title = {Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC},
author = {Sorgenfrei, Niels and Arnqvist, Elias and Gurimskaya, Yana and Moll, Michael and Parzefall, Ulrich and Rizwan, Faiza and Wiehe, Moritz},
year = {2025},
doi = {10.48550/arxiv.2505.02671},
url = {https://doi.org/10.48550/arxiv.2505.02671}
}RIS
TY - JOUR TI - Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC AU - Sorgenfrei, Niels AU - Arnqvist, Elias AU - Gurimskaya, Yana AU - Moll, Michael AU - Parzefall, Ulrich AU - Rizwan, Faiza AU - Wiehe, Moritz PY - 2025 DO - 10.48550/arxiv.2505.02671 UR - https://doi.org/10.48550/arxiv.2505.02671 ER -
APA
Niels, S., Elias, A., Yana, G., Michael, M., Ulrich, P., Faiza, R., & Moritz, W. (2025). Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC. https://doi.org/10.48550/arxiv.2505.02671
Source records
- datacite · retrieved 2026-09-26T22:39:34.264Z