Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices
- DOI
- 10.48550/arxiv.2512.03853
- Published
- 2025
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2512.03853,
title = {Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices},
author = {Turner, Jack J. and Binder, Christian W. and Burkard, Guido and Fisher, Andrew J.},
year = {2025},
doi = {10.48550/arxiv.2512.03853},
url = {https://doi.org/10.48550/arxiv.2512.03853}
}RIS
TY - JOUR TI - Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices AU - Turner, Jack J. AU - Binder, Christian W. AU - Burkard, Guido AU - Fisher, Andrew J. PY - 2025 DO - 10.48550/arxiv.2512.03853 UR - https://doi.org/10.48550/arxiv.2512.03853 ER -
APA
J., T. J., W., B. C., Guido, B., & J., F. A. (2025). Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices. https://doi.org/10.48550/arxiv.2512.03853
Source records
- datacite · retrieved 2026-09-25T18:54:24.253Z