Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
- DOI
- 10.48550/arxiv.2609.29990
- Published
- 2026
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2609.29990,
title = {Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage},
author = {Pratt, Jonathan and Liu, Yizheng and Mohamed, Ijaas and Shin, Seungheon and Srikanth, Akilesh and Morshed, Md Saklain and Klein, Brianna A. and Armstrong, Andrew and Allerman, Andrew A. and Krishnamoorthy, Sriram and Rajan, Siddharth},
year = {2026},
doi = {10.48550/arxiv.2609.29990},
url = {https://doi.org/10.48550/arxiv.2609.29990}
}RIS
TY - JOUR TI - Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage AU - Pratt, Jonathan AU - Liu, Yizheng AU - Mohamed, Ijaas AU - Shin, Seungheon AU - Srikanth, Akilesh AU - Morshed, Md Saklain AU - Klein, Brianna A. AU - Armstrong, Andrew AU - Allerman, Andrew A. AU - Krishnamoorthy, Sriram AU - Rajan, Siddharth PY - 2026 DO - 10.48550/arxiv.2609.29990 UR - https://doi.org/10.48550/arxiv.2609.29990 ER -
APA
Jonathan, P., Yizheng, L., Ijaas, M., Seungheon, S., Akilesh, S., Saklain, M. M., A., K. B., Andrew, A., A., A. A., Sriram, K., & Siddharth, R. (2026). Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage. https://doi.org/10.48550/arxiv.2609.29990
Source records
- datacite · retrieved 2026-09-26T03:35:39.512Z