NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone
- DOI
- 10.48550/arxiv.2610.40000
- Published
- 2026
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2610.40000,
title = {NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone},
author = {Li, Zhuoran and Bian, Zhuohang and Zhao, Yibo and Yang, Xuxiao and Zhuo, Youwei},
year = {2026},
doi = {10.48550/arxiv.2610.40000},
url = {https://doi.org/10.48550/arxiv.2610.40000}
}RIS
TY - JOUR TI - NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone AU - Li, Zhuoran AU - Bian, Zhuohang AU - Zhao, Yibo AU - Yang, Xuxiao AU - Zhuo, Youwei PY - 2026 DO - 10.48550/arxiv.2610.40000 UR - https://doi.org/10.48550/arxiv.2610.40000 ER -
APA
Zhuoran, L., Zhuohang, B., Yibo, Z., Xuxiao, Y., & Youwei, Z. (2026). NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone. https://doi.org/10.48550/arxiv.2610.40000
Source records
- datacite · retrieved 2026-11-10T12:15:32.484Z