Band Alignment of Grafted versus Directly Bonded Si/Ge Heterostructures
- DOI
- 10.48550/arxiv.2611.02259
- Published
- 2026
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2611.02259,
title = {Band Alignment of Grafted versus Directly Bonded Si/Ge Heterostructures},
author = {Vashishtha, Pargam and Liu, Yang and Tsai, Tsung-Han and Lu, Yi and Haessly, Samuel A. and Wang, Chenyu and Dissanayake, Nanditha M. and Edward and Huang, K. and Ma, Zhenqiang},
year = {2026},
doi = {10.48550/arxiv.2611.02259},
url = {https://doi.org/10.48550/arxiv.2611.02259}
}RIS
TY - JOUR TI - Band Alignment of Grafted versus Directly Bonded Si/Ge Heterostructures AU - Vashishtha, Pargam AU - Liu, Yang AU - Tsai, Tsung-Han AU - Lu, Yi AU - Haessly, Samuel A. AU - Wang, Chenyu AU - Dissanayake, Nanditha M. AU - Edward AU - Huang, K. AU - Ma, Zhenqiang PY - 2026 DO - 10.48550/arxiv.2611.02259 UR - https://doi.org/10.48550/arxiv.2611.02259 ER -
APA
Pargam, V., Yang, L., Tsung-Han, T., Yi, L., A., H. S., Chenyu, W., M., D. N., Edward, K., H., & Zhenqiang, M. (2026). Band Alignment of Grafted versus Directly Bonded Si/Ge Heterostructures. https://doi.org/10.48550/arxiv.2611.02259
Source records
- datacite · retrieved 2026-11-10T12:46:31.590Z