Statistical Modelling of ft to Process Parameters in 30 NM Gate Length Finfets

B Lakshmi, R Srinivasan

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DOI: 10.5121/vlsic.2010.1304
Published: 2010-09-30
Container: International Journal of VLSI Design & Communication Systems
Publisher: Academy and Industry Research Collaboration Center (AIRCC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.5121/vlsic.2010.1304,
  title = {Statistical Modelling of ft to Process Parameters in 30 NM Gate Length Finfets},
  author = {B Lakshmi and R Srinivasan},
  year = {2010},
  journal = {International Journal of VLSI Design \&amp; Communication Systems},
  doi = {10.5121/vlsic.2010.1304},
  url = {https://doi.org/10.5121/vlsic.2010.1304}
}

RIS

TY  - JOUR
TI  - Statistical Modelling of ft to Process Parameters in 30 NM Gate Length Finfets
AU  - B Lakshmi
AU  - R Srinivasan
PY  - 2010
JO  - International Journal of VLSI Design &amp; Communication Systems
DO  - 10.5121/vlsic.2010.1304
UR  - https://doi.org/10.5121/vlsic.2010.1304
ER  -

APA

Lakshmi, B., & Srinivasan, R. (2010). Statistical Modelling of ft to Process Parameters in 30 NM Gate Length Finfets. International Journal of VLSI Design & Communication Systems. https://doi.org/10.5121/vlsic.2010.1304

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crossref · retrieved 2026-09-25T01:48:15.811Z