Doping Profile Measurement And Characterization By Scanning Capacitance Microscope For Pocketimplanted Nano Scale N-Mosfet
- DOI
- 10.5281/zenodo.1078726
- Published
- 2011
- Container
- Not recorded
- Publisher
- Zenodo
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.5281/zenodo.1078726,
title = {Doping Profile Measurement And Characterization By Scanning Capacitance Microscope For Pocketimplanted Nano Scale N-Mosfet},
author = {Muhibul Haque Bhuyan and Farseem Mannan Mohammedy and Quazi Deen Mohd Khosru},
year = {2011},
doi = {10.5281/zenodo.1078726},
url = {https://doi.org/10.5281/zenodo.1078726}
}RIS
TY - JOUR TI - Doping Profile Measurement And Characterization By Scanning Capacitance Microscope For Pocketimplanted Nano Scale N-Mosfet AU - Muhibul Haque Bhuyan AU - Farseem Mannan Mohammedy AU - Quazi Deen Mohd Khosru PY - 2011 DO - 10.5281/zenodo.1078726 UR - https://doi.org/10.5281/zenodo.1078726 ER -
APA
Bhuyan, M. H., Mohammedy, F. M., & Khosru, Q. D. M. (2011). Doping Profile Measurement And Characterization By Scanning Capacitance Microscope For Pocketimplanted Nano Scale N-Mosfet. https://doi.org/10.5281/zenodo.1078726