Conception d'amplificateurs de puissance en technologie 130nm CMOS SOI et 28nm FD SOI pour des applications 5G NB-IoT

Tristan Lecocq

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DOI: 10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315
Published: Not recorded
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Publisher: Agence Bibliographique de l'Enseignement Supérieur
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Cite this work

BibTeX

@article{allodium:10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315,
  title = {Conception d'amplificateurs de puissance en technologie 130nm CMOS SOI et 28nm FD SOI pour des applications 5G NB-IoT},
  author = {Tristan Lecocq},
  doi = {10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315},
  url = {https://doi.org/10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315}
}

RIS

TY  - JOUR
TI  - Conception d'amplificateurs de puissance en technologie 130nm CMOS SOI et 28nm FD SOI pour des applications 5G NB-IoT
AU  - Tristan Lecocq
DO  - 10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315
UR  - https://doi.org/10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315
ER  -

APA

Lecocq, T. (n.d.). Conception d'amplificateurs de puissance en technologie 130nm CMOS SOI et 28nm FD SOI pour des applications 5G NB-IoT. https://doi.org/10.70675/13479803z83eez4cd7zbf8bz7ae3f349d315

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crossref · retrieved 2026-11-10T19:15:13.715Z