rf reliability in soi cmos technologies : device model and application to power amplifiers

Joycelyn Hai

Open source

DOI: 10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c
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Publisher: Agence Bibliographique de l'Enseignement Supérieur
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Cite this work

BibTeX

@article{allodium:10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c,
  title = {rf reliability in soi cmos technologies : device model and application to power amplifiers},
  author = {Joycelyn Hai},
  doi = {10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c},
  url = {https://doi.org/10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c}
}

RIS

TY  - JOUR
TI  - rf reliability in soi cmos technologies : device model and application to power amplifiers
AU  - Joycelyn Hai
DO  - 10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c
UR  - https://doi.org/10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c
ER  -

APA

Hai, J. (n.d.). rf reliability in soi cmos technologies : device model and application to power amplifiers. https://doi.org/10.70675/45f943cbzc89bz4a9az987fz7c220ec7395c

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crossref · retrieved 2026-11-10T23:56:35.408Z