Modélisation de la manipulation électrique des qubits de trou dans le silicium

Benjamin Venitucci

Open source

DOI: 10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02
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Publisher: Agence Bibliographique de l'Enseignement Supérieur
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Cite this work

BibTeX

@article{allodium:10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02,
  title = {Modélisation de la manipulation électrique des qubits de trou dans le silicium},
  author = {Benjamin Venitucci},
  doi = {10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02},
  url = {https://doi.org/10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02}
}

RIS

TY  - JOUR
TI  - Modélisation de la manipulation électrique des qubits de trou dans le silicium
AU  - Benjamin Venitucci
DO  - 10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02
UR  - https://doi.org/10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02
ER  -

APA

Venitucci, B. (n.d.). Modélisation de la manipulation électrique des qubits de trou dans le silicium. https://doi.org/10.70675/495ac24dz4adfz4716zb1bezc41ddd6add02

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crossref · retrieved 2026-09-26T17:23:33.067Z