Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration

Daphnée Bosch

Open source

DOI: 10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615
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Publisher: Agence Bibliographique de l'Enseignement Supérieur
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Cite this work

BibTeX

@article{allodium:10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615,
  title = {Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration},
  author = {Daphnée Bosch},
  doi = {10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615},
  url = {https://doi.org/10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615}
}

RIS

TY  - JOUR
TI  - Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration
AU  - Daphnée Bosch
DO  - 10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615
UR  - https://doi.org/10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615
ER  -

APA

Bosch, D. (n.d.). Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration. https://doi.org/10.70675/ab6ce2cazfef7z46f1z8094zc3a0dbbe3615

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crossref · retrieved 2026-11-10T18:55:05.258Z