Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations

Boubacar Traoré

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DOI: 10.70675/af5ede8dzb739z46ecz8c90z420a090971ba
Published: Not recorded
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Publisher: Agence Bibliographique de l'Enseignement Supérieur
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Cite this work

BibTeX

@article{allodium:10.70675/af5ede8dzb739z46ecz8c90z420a090971ba,
  title = {Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations},
  author = {Boubacar Traoré},
  doi = {10.70675/af5ede8dzb739z46ecz8c90z420a090971ba},
  url = {https://doi.org/10.70675/af5ede8dzb739z46ecz8c90z420a090971ba}
}

RIS

TY  - JOUR
TI  - Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations
AU  - Boubacar Traoré
DO  - 10.70675/af5ede8dzb739z46ecz8c90z420a090971ba
UR  - https://doi.org/10.70675/af5ede8dzb739z46ecz8c90z420a090971ba
ER  -

APA

Traoré, B. (n.d.). Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations. https://doi.org/10.70675/af5ede8dzb739z46ecz8c90z420a090971ba

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crossref · retrieved 2026-09-27T02:10:27.846Z