Characterization of indium phosphide and indium gallium arsenic phosphide grown by helium-plasma-assisted GSMBE

Pinkey, Heidi

DOI: 10.71548/23040
Published: 1999
Container: Not recorded
Publisher: McMaster University
Open access: no

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Cite this work

BibTeX

@article{allodium:10.71548/23040,
  title = {Characterization of indium phosphide and indium gallium arsenic phosphide grown by helium-plasma-assisted GSMBE},
  author = {Pinkey, Heidi},
  year = {1999},
  doi = {10.71548/23040},
  url = {https://doi.org/10.71548/23040}
}

RIS

TY  - JOUR
TI  - Characterization of indium phosphide and indium gallium arsenic phosphide grown by helium-plasma-assisted GSMBE
AU  - Pinkey, Heidi
PY  - 1999
DO  - 10.71548/23040
UR  - https://doi.org/10.71548/23040
ER  -

APA

Heidi, P. (1999). Characterization of indium phosphide and indium gallium arsenic phosphide grown by helium-plasma-assisted GSMBE. https://doi.org/10.71548/23040

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datacite · retrieved 2026-09-25T12:20:02.490Z