Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric
- Type
- Retraction
- Notice date
- 12/27/2014 0:00
- Journal
- Journal of Vacuum Science & Technology A
- Publisher
- AIP Publishing
- Notice DOI
- 10.1116/1.4905778
- Original paper DOI
- 10.1116/1.4895107