Retraction notices

Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP d-doped high electron mobility transistor

Type

Retraction

Notice date

8/19/2005 0:00

Journal

Applied Physics Letters

Publisher

AIP Publishing

Notice DOI

10.1063/1.2033141

Original paper DOI

10.1063/1.1855387

Reasons

• Euphemisms for Plagiarism
• Plagiarism of Data
• Unreliable Data
• Unreliable Results and/or Conclusions

Matching venue names

Name match only, not an authoritative journal identifier.

• Applied Physics Letters