High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy
- Type
- Retraction
- Notice date
- 7/19/2018 0:00
- Journal
- Journal of Crystal Growth
- Publisher
- Elsevier
- Notice DOI
- 10.1016/j.jcrysgro.2018.09.044
- Original paper DOI
- 10.1016/j.jcrysgro.2012.12.030
Reasons
- Concerns/Issues about Authorship/Affiliation
- Copyright Claims
- Date of Article and/or Notice Unknown
- Lack of Approval from Company/Institution