Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2
- Type
- Retraction
- Notice date
- 6/19/2017 0:00
- Journal
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Notice DOI
- 10.7567/jjap.56.079201
- Original paper DOI
- 10.7567/jjap.55.04er16