Enhanced Resistive Switching Memory Characteristics and Mechanism Using a Ti Nanolayer at the W/TaOx Interface
- Type
- Retraction
- Notice date
- 10/22/2013 0:00
- Journal
- Discover Nano (formerly known as Nanoscale Research Letters)
- Publisher
- Springer
- Notice DOI
- 10.1186/1556-276x-8-419
- Original paper DOI
- unavailable