Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
- Type
- Retraction
- Notice date
- 12/30/2015 0:00
- Journal
- Microelectronic Engineering
- Publisher
- Elsevier
- Notice DOI
- 10.1016/j.mee.2015.12.013
- Original paper DOI
- 10.1016/j.mee.2010.10.030