Retraction notices

A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue

Type
Correction
Notice date
6/1/2016 0:00
Journal
IEEE Electron Device Letters
Publisher
IEEE: Institute of Electrical and Electronics Engineers
Notice DOI
10.1109/led.2016.2562518
Original paper DOI
10.1109/led.2015.2472987

Reasons

Matching venue names

Name match only, not an authoritative journal identifier.