Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
- Type
- Retraction
- Notice date
- 1/15/2013 0:00
- Journal
- Thin Solid Films
- Publisher
- Elsevier
- Notice DOI
- 10.1016/j.tsf.2012.09.093
- Original paper DOI
- 10.1016/j.tsf.2012.09.093