Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells
- Type
- Retraction
- Notice date
- 4/6/2011 0:00
- Journal
- Materials Science and Engineering: B
- Publisher
- Elsevier
- Notice DOI
- 10.1016/j.mseb.2011.03.009
- Original paper DOI
- 10.1016/s0921-5107(02)00572-x