Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk
- Type
- Retraction
- Notice date
- 2/2/2012 0:00
- Journal
- 2011 11th IEEE International Conference on Nanotechnology
- Publisher
- IEEE: Institute of Electrical and Electronics Engineers
- Notice DOI
- 10.1109/nano.2011.6144524
- Original paper DOI
- 10.1109/nano.2011.6144524