Retraction notices

Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances

Type

Retraction

Notice date

11/1/2010 0:00

Journal

Semiconductor Science and Technology

Publisher

IOP Publishing

Notice DOI

10.1088/0268-1242/25/11/119801

Original paper DOI

10.1088/0268-1242/17/7/315

Reasons

• Concerns/Issues about Authorship/Affiliation
• Error in Data
• Error in Image
• Error in Results and/or Conclusions
• Error in Text
• Results Not Reproducible

Matching venue names

Name match only, not an authoritative journal identifier.

• Semiconductor Science and Technology