GaN-based semiconductor devices and materials
This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.
Papers listed on taxonomy pages are the top few works per node from the OpenAlex snapshot. That list is not exhaustive and is not an endorsement. The topic map and the journal registry remain separate: there is still no authoritative topic-to-venue or topic-to-organization edge. Search is a lexical lookup, not a claim that a venue publishes a topic.
Most cited
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
- The Blue Laser Diode: GaN based Light Emitters and Lasers
- First-principles calculations for defects and impurities: Applications to III-nitrides
- Spontaneous polarization and piezoelectric constants of III-V nitrides
- Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Most recent
- Investigation of Device Characterisation and Circuit Design Based on GaN Technology
- PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells
- Work function modulated electronic and optoelectronic properties of 2D GaN/Metal Schottky contacts: A first-principles study
- Effect of Polarity on the Electrical Properties and Low-Frequency Noise Characteristics of LEDs Grown on Sapphire Substrates
- AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs
- Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers