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10 merged results for "Ferroelectric and Negative Capacitance Devices"

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  1. Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.

    Lee S, Sin S, Jang C, Kang S · 2026 · Small (Weinheim an der Bergstrasse, Germany)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.1002/smll.202514878

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  2. Stabilized Negative Capacitance in In2Se3-Based 2D Ferroelectric Transistors.

    Cai W, Zhao G, Ju X, Ng HK · 2026 · Nano letters

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acs.nanolett.6c01781

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  3. Overcoming Boltzmann's Tyranny in All-Metal-Oxide Negative Capacitance Field-Effect Transistor.

    Lee C, Hwang S, Shin JC, Lee J · 2026 · ACS nano

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acsnano.5c16956

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  4. The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory.

    Park HW, Koo WT, Suh DI, Seo J · 2026 · Nature communications

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.1038/s41467-026-71823-z

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  5. Celestial neuromorphics based on ferroelectric gallium oxide.

    Xu K, Guan Z, Pei M, Luo Y · 2026 · National science review

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.1093/nsr/nwag362

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  6. Label-Free Detection of Thyroid Cancer Biomarkers Using Heterojunction GAA Ferroelectric p-n-i-n TFET Biosensor.

    Das SS, Sarkar SK · 2026 · IEEE transactions on nanobioscience

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1109/tnb.2026.3690174

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  7. Compact ferroelectric domain-ensemble model linking PUND switching, wake-up, and plasmonic optical readout.

    Jan A, Di Martino G · 2026 · Optics express

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1364/oe.595543

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  8. Van Der Waals Ferroionic CuInP(2)S(6): Emergent Properties and Device Application.

    Li M, Peng Z, Zhang D, Wang X · 2026 · Materials (Basel, Switzerland)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/ma19081586

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  9. Area Scaling of Nanosecond Switching Delay in HZO Capacitors with an Ultrathin ZrO(2) Interlayer.

    Hao L, Zhong Y · 2026 · Micromachines

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/mi17101140

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  10. Thickness Engineering in HfO(2)-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs.

    Cai Y, Li Y, Gao Z, Zhang Q · 2026 · Nanomaterials (Basel, Switzerland)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/nano16191208

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