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10 merged results for "Tunnel Field-Effect Transistors"

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  1. Breaking the Boltzmann Limit: A Review of Emerging Ultralow-Power Transistor Technologies.

    Ma X, Tan X, Meng D, Peng LM · 2026 · Advanced materials (Deerfield Beach, Fla.)

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1002/adma.75434

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  2. Emergent Electronic, Spin, and Transport Properties of Bilayer van der Waals Heterostructures from Antimonene, Tellurene, and PtTe2 Monolayers.

    Cai X, Li M, Yuan J, Li R · 2026 · Langmuir : the ACS journal of surfaces and colloids

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acs.langmuir.6c04348

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  3. Revisiting the Schottky-Mott Relation for Metal/Transition Metal Dichalcogenide Interfaces: The Role of Interface Dipoles.

    Chuu CP, Chang SJ, Sheu YM, Huang ZS · 2026 · ACS nano

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acsnano.6c02189

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  4. A Capacitively Coupled Dual-Gate 2D Transistor Unifying Logic-in-Memory and Tunable Synaptic Plasticity.

    He M, Yang G, Jiang B, Meng X · 2026 · ACS nano

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acsnano.6c14423

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  5. CRISPR/Cas13a-Based Nucleic Acid-Functionalized Discrete Floating-Gate Field-Effect Transistor for Amplification-Free Rapid Nipah Virus Detection.

    Tong Z, Huang Z, Liu J, Su J · 2026 · ACS sensors

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acssensors.6c02218

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  6. Theoretical design of quantum-tunneling-enabled ultra-steep-slope bipolar reconfigurable logic field-effect transistors based on 2D Janus XMoSiN(2) (X = O, S, Se, Te) monolayers.

    Zhang W, Zhao W, Wang H, Gao F · 2026 · Physical chemistry chemical physics : PCCP

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1039/d6cp02621d

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  7. A monolayer SnS(2) Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart.

    Li H, Duan T, Zhang X, Liu F · 2026 · Nanoscale

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1039/d6nr02642g

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  8. Breaking the SS-I(on)trade-off in 2D TFETs through an isolated conduction band in monolayer AgSe.

    Zhao J, Dong L, Peng B, Zhang F · 2026 · Nanotechnology

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1088/1361-6528/aeb428

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  9. Characterisation of vertical gate-all-around tunnel FET using modulation-doped InGaAs nanowire/Si junction on SOI wafer.

    Fujimoto K, Taniyama K, Azuma Y, Tomioka K · 2026 · Nanotechnology

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1088/1361-6528/aebbc4

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  10. A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect.

    Cheng H, Yang Z, Zhang C, Zhang Z · 2026 · Nanomaterials (Basel, Switzerland)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/nano16171053

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